IndiumV3, Russie, Analysis, bibRecord, 001115

High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

Identifieur interne : 001115 ( Russie/Analysis ); précédent : 001114; suivant : 001116

High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

Auteurs : RBID : Pascal:97-0428123

Descripteurs français

Pascal (Inist)
- Etude expérimentale, Croissance cristalline en phase vapeur, Epitaxie jet moléculaire, Point quantique, Matériau semiconducteur, Composé ternaire, Indium arséniure, Gallium arséniure, Multicouche, XRD, Réflexion RX, Corrélation spatiale, Caractérisation, 6865, InGaAs, As Ga In.

English descriptors

KwdEn :
- Characterization, Crystal growth from vapors, Experimental study, Gallium arsenides, Indium arsenides, Molecular beam epitaxy, Multilayers, Quantum dots, Semiconductor materials, Spatial correlation, Ternary compounds, X ray reflection, XRD.

Abstract

We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the <100> direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays.

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Le document en format XML

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<term>Quantum dots</term>
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<term>Matériau semiconducteur</term>
<term>Composé ternaire</term>
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<term>Gallium arséniure</term>
<term>Multicouche</term>
<term>XRD</term>
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<front><div type="abstract" xml:lang="en">We have investigated multiple layers of self-assembled InGaAs quantum dots by high-resolution X-ray diffraction reciprocal space mapping and reflectivity. An anisotropy in the dot spacing was found, which proves an ordering of the islands in a disordered two-dimensional square lattice with main axes parallel to the <100> direction and a lateral lattice parameter of 55 nm. Vertical correlations in the dot multilayers were investigated nondestructively in the regime of total external reflection of X-rays.</div>
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<s4>1996-11-04</s4>
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High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

High resolution X-ray diffraction and reflectivity studies of vertical and lateral ordering in multiple self-organized InGaAs quantum dots

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Abstract

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